助理教授A，博士生导师，国家级青年人才，上海市青年人才。本科毕业于合肥工业大学，随后在中国科学院上海微系统与信息技术研究所取得硕士学位，并于2023年获瑞典隆德大学 (Lund University) 电子工程专业博士学位，导师为Lars-Erik Wernersson教授(瑞典皇家工程院院士)。2024年起在美国麻省理工学院 (MIT) 从事博士后研究工作，合作导师为Tomás Palacios教授(MIT微系统技术实验室主任，IEEE Fellow)。其主要研究方向为先进微纳电子器件结构设计与工艺研发。2026年加入复旦大学芯片与系统前沿技术研究院。
其研究主要围绕后摩尔新型信息器件展开，包括1）三维环栅 (GAA) 晶体管及其与铁电栅极的集成，面向可重构、高密度、低功耗的新型多功能器件；2）先进节点晶体管的微缩及可靠性研究，高温/深低温区间的电学表征等。研究工作涵盖器件结构设计与仿真、工艺开发与优化、器件测试等，致力于发展高集成密度的多功能信息器件与集成技术，为新一代算力生态提供基础硬件底座。
以一作/通讯在Nat. Commun.、Sci. Adv.、IEDM、VLSI、IEEE EDL等期刊及会议发表论文10余篇，获华为技术挑战赛半导体领域金奖、国家优秀留学生奖学金等。
课题组长期招收博士/硕士研究生、博士后，也会开展本科生科研实习项目(如FDUROP)。课题组氛围开放，鼓励学生参与国际会议与合作项目。
欢迎有志于先进半导体器件与集成、勇于创新的同学加入，共同学习，一起开展前沿学术探索。
Zhongyunshen Zhu is an Assistant Professor and Ph.D. Advisor at Frontier Institute of Chip and System, Fudan University. Dr. Zhu received his B.S. degree from Hefei University of Technology, his M.S. degree from the Shanghai Institute of Microsystem and Information Technology (SIMIT), Chinese Academy of Sciences, and his Ph.D. degree in Electrical Engineering from Lund University, Sweden, in 2023, under the supervision of Prof. Lars-Erik Wernersson (Fellow of the Royal Swedish Academy of Engineering Sciences). From 2024 to 2026, he conducted postdoctoral research at Massachusetts Institute of Technology (MIT) working with Prof. Tomás Palacios (Director of the Microsystems Technology Laboratories at MIT, IEEE Fellow). He joined Fudan University in 2026.
研究方向/Research：
BEOL器件设计与集成/ BEOL Device Design and Integration
新型高密度存储器件/ Novel High-Density Memory Devices
器件互连与异质集成/ Device Interconnects & Heterogeneous Integration
Email: zhuzhysh@fudan.edu.cn
1. Z. Zhu, A. Yao, P. Sun, Y. Jiao, M. Mohamed, J.-H. Park, J. Li, J. Kong, J. Zhu, T. Palacios. Performance Demonstration of Monolayer MoS2 Transistors at Cryogenic Temperatures Down to 6 K for Ultralow-Power Electronics, 2026 IEEE VLSI Technology and Circuits, 1-3.
2. Z. Zhu, A. Yao, J. Zhu, Y. Jiao, J. Kong, T. Palacios. Reliability Study of MoS2 Transistors with Channel Length Scaling and Sub-1-nm EOT, 2025 IEEE IEDM, 1-4.
3. Z. Zhu, A. E. O. Persson, L.-E. Wernersson. Reconfigurable signal modulation in a ferroelectric tunnel field-effect transistor, Nature Communications, 2023, 14(1): 2530.
4. Z. Zhu, A. E. O. Persson, L.-E. Wernersson. Sensing single domains and individual defects in scaled ferroelectrics, Science Advances, 2023, 9(5): eade7098.
5. Z. Zhu, A. E. O. Persson, L.-E. Wernersson. Multifunctional Reconfigurable Operations in an Ultra-Scaled Ferroelectric Negative Transconductance Transistor, ACS Nano, 2024, 18(42): 28977-28985.
6. Z. Zhu, M. K. Ram, A. E. O. Persson, L.-E. Wernersson. Low-Frequency Noise in Ferroelectric III-V Vertical Gate-All-Around FETs, IEEE Electron Device Letters, 2025, 46 (5): 741-744.
7. Z. Zhu, H. Pal, A. D. Varma, M. Imura, H. Okumura, T. Palacios. Zr-Based Contacts to n-Type AlN with Improved Performance for Power and High-Temperature Electronics, IEEE Electron Device Letters, 2026, 47(6): 1077-1080.
