2022年5月至今，复旦大学，芯片与系统前沿技术研究院，青年研究员。

2020年11月-2022年4月，洛桑联邦理工学院, 电子与微工程系，Scientist。

2019年10月-2020年10月，格罗宁根大学，Zernike先进材料研究所，博士后。

2015年10月-2020年1月，格罗宁根大学，Zernike先进材料研究所，博士，导师：Prof. Beatriz Noheda

研究内容：新型铁电材料与存储技术（1）新型铁电薄膜制备、物性调控及先进表征；（2）新型铁电器件在存储、新型计算等领域的应用。研究成果以一作/通讯发表在Science、Nature Materials等国际顶级期刊，多次受邀在领域内重要国际学术会议作特邀报告。入选国家级和上海市海外高层次青年人才引进计划。

课题组长期招收博士后、博士及硕士研究生，欢迎感兴趣的同学加入，共同学习和探索。

1. Yonghui Zheng, Ruirong Bai, Tianjiao Xin, Xuanyu Zhao, Yan Cheng*, Yu-Ning Wu*, Yingfen Wei*, Binghui Ge, He Tian, Shiyou Chen, Qi Liu, Chungang Duan, Ming Liu, “Alternating atomic-dipole layers and switching dynamics in Al1-xScxN ferroelectrics”, Science 393, 6806, 85-89, 2026

2. Xiaodong Wang, Linhui Hu, Guan Feng, Hao Jiang*, Yu Li, Yuqi Gao, Feng Wang, Xiaofeng Qian, Yingfen Wei*, Xianzhe Chen, Qian Tao, Yushi Hu, Qi Liu*, Ming Liu, “2Mb HZO-Based Embedded FeRAM with Scaled BEOL-Processed 3D Capacitors Demonstrating High Retention (≥ 1000 h) and Robust Endurance (≥ 10 12 Cycles)@ 125° C”, 2026 IEEE International Reliability Physics Symposium (IRPS)

3. Qihan Liu, Yu Li, Liwei Liu, Hao Jiang*, Haozhe Zhu, Zexing Chen, Yang Yang, Mengwei Si, Can Li, Peng Lin, Yingfen Wei*, Qi Liu*, “High-density, nonvolatile SRAM using monolithic 3D integration of InGaZnO thin-film transistors and Hf0.5Zr0.5O2-based ferroelectric capacitors”, Device 3, 2025

4. Guan Feng, Xiaodong Wang, Yize Sun, Yu Li*, Haoyu Lu, Yang Yang, Xumeng Zhang, Yingfen Wei*, Hao Jiang*, Qi Liu, “Robust Ferroelectricity and Suppressed Leakage Current in Ultrathin (4 nm) HfO2/ZrO2 Nanolaminates With Ru-TiN Asymmetric Electrodes”, IEEE Transactions on Electron Devices, 72, 9, 4830-4836, 2025

5. Yize Sun, Shucheng Zhang, Qihan Liu, Yu Li*, Haoyu Lu, Xumeng Zhang, Yingfen Wei*, Mengwei Si, Hao Jiang*, Qi Liu, “Back-End-of-Line Compatible 2T1C Memory Cell With InGaZnO Thin-Film Transistors and Hf0.5Zr0.5O2-Based Ferroelectric Capacitors”, IEEE Transactions on Electron Devices, 72, 3, 1097-1103, 2025

6. Xuanyu Zhao, Jie Yu, Yu Li, Yiwei Wang, Fansen Cao, Yan Cheng, Yingfen Wei*, Hao Jiang*, Qi Liu*, Ming Liu, “First Demonstration of Annealing-Free RT-Prepared AlScN Film with Large Polarization (2Pr> 300 μ C/cm2) and Ultra-Sharp Ec Distribution for 0T1C FeRAM”, 2025 IEEE Symposium on VLSI Technology and Circuits, Kyoto, Japan, 2025 

7. Haoyu Lu, Yu Li, Jiyuan Han, Geng Huangfu, Guan Feng, Shuaishuai Yin, Yingfen Wei*, Hao Jiang*, Changlin Zheng*, Qi Liu*, Ming Liu, “Interface‐Modulated Antiferroelectric‐to‐Ferroelectric‐Like Transition in Ultrathin Hf0.5Zr0.5O2 Films”, Advanced Functional Materials 35, 2414187, 2025

8. Shuning Zhang, Fansen Cao, Haoyu Lu, Yingfen Wei*, Xuanyu Zhao, Hao Jiang, Xiaobing Yan*, Qi Liu*, “Interface Engineering on Ferroelectricity of Transparent Hf0.5Zr0.5O2 Ferroelectric Capacitors”, IEEE Electron Device Letters, 45, 12, 2347-2350, 2024

9. Shucheng Zhang, Yu Li*, Yingfen Wei*, Yize Sun, Xumeng Zhang, Hao Jiang*, Qi Liu, “A General Physics Model of Oxygen Vacancy Dynamics for Ferroelectricity Enhancement and Degradation in Hafnia-Based Thin Films”, IEEE Transactions on Electron Devices, 71, 11, 6706-6712, 2024

10. Guan Feng, Yu Li, Hao Jiang*, Xiaodong Wang, Yize Sun, Yingfen Wei*, Qi Liu*, Ming Liu, “Comprehensive Analysis of Duty-Cycle Induced Degradations in HfxZr1-xO2-Based Ferroelectric Capacitors: Behavior, Modeling, and Optimization”, 2024 IEEE Symposium on VLSI Technology and Circuits, Honolulu, USA, 2024 

11. Yu Li, Keji Zhou, Hao Jiang*, Zhangcheng Huang, Xumeng Zhang, Yingfen Wei*, Qi Liu, “Working Principles and Performance Optimization of Nonvolatile 6T2C-SRAM With Hafnia-Based Ferroelectric Capacitors”, IEEE Transactions on Electron Devices, 71, 8, 4631-4636, 2024

12. Yu Li, Hao Jiang*, Jie Yu, Xuanyu Zhao, Xiaodong Wang, Qihan Liu, Yingfen Wei*, Qi Liu*, Ming Liu, “High-efficient and Comprehensive Modeling of MFIM Ferroelectric Tunnel Junctions for Non-volatile/Volatile Applications”, IEEE International Memory Workshop (IMW), Seoul, Korea, 2024

13. Shuyu Wu, Xumeng Zhang, Rongrong Cao, Keji Zhou, Jikai Lu, Chao Li, Yang Yang, Dashan Shang, Yingfen Wei*, Hao Jiang*, Qi Liu*, “Multi-state nonvolatile capacitances in HfO2-based ferroelectric capacitor for neuromorphic computing”, Applied Physics Letters, 124, 102902, 2024

14. Yuan Wang, Lei Tao, Roger Guzman, Qing Luo*, Wu Zhou, Yang Yang, Yingfen Wei, Yu Liu, Pengfei Jiang, Yuting Chen, Shuxian Lv, Yaxin Ding, Wei Wei, Tiancheng Gong, Yan Wang, Qi Liu, Shixuan Du*, Ming Liu*, “A stable rhombohedral phase in ferroelectric Hf(Zr)1+xO2 capacitor with ultralow coercive field”, Science 381, 6657, 558-563, 2023

15. Yingfen Wei*, Gaurav Vats, Beatriz Noheda*, “Synaptic behaviour in ferroelectric epitaxial rhombohedral Hf0. 5Zr0. 5O2 thin films”, Neuromorphic Computing and Engineering 2, 044007, 2022 (Highlight Paper)

16. Pavan Nukala, Majid Ahmadi, Yingfen Wei, Sytze de Graaf, Evgenios Stylianidis, Tuhin Chakrabortty, Sylvia Matzen, Henny W. Zandbergen, Alexander Björlin, Dan Mannix, Dina Carbone, Bart Kooi, Beatriz Noheda*, “Reversible oxygen migration and phase transitions in hafnia-based ferroelectric devices”, Science, 372(6542): 630-635, 2021 

17. Pavan Nukala#, Yingfen Wei#; Vincent de Haas, Qikai Guo, Jordi Antoja-Lleonart; Beatriz Noheda*, “Guidelines for the stabilization of a polar rhombohedral phase in epitaxial Hf0.5Zr0.5O2 thin films”, Ferroelectrics, 569(1: 50th Anniversary): 148-163, 2020 （appear in the Golden Jubilee edition of Ferroelectrics）

18. Yingfen Wei, Sylvia Matzen, Cynthia P. Quinteros, Thomas Maroutian, Guillaume Agnus, Philippe Lecoeur, Beatriz Noheda*; “Magneto-ionic control of spin polarization in multiferroic tunnel junctions”, npj Quantum Materials, 4(62): 1-6, 2019

19. Yingfen Wei, Sylvia Matzen, Thomas Maroutian, Guillaume Agnus, Mart Salverda; Pavan Nukala, Qihong Chen, Jianting Ye, Philippe Lecoeur, Beatriz Noheda*, “Magnetic tunnel junctions based on ferroelectric Hf0.5Zr0.5O2 tunnel barriers”, Physical Review Applied, 12(031001): 1-6, 2019（selected for editors suggestion highlight）

20. Yingfen Wei, Pavan Nukala, Mart Salverda, Sylvia Matzen, Hong Jian Zhao, Jamo Momand, Arnoud S. Everhardt, Guillaume Agnus, Graeme R. Blake, Philippe Lecoeur, Bart J. Kooi, Jorge Iniguez, Brahim Dkhil, Beatriz Noheda*, “A rhombohedral ferroelectric phase in epitaxially strained Hf0.5Zr0.5O2 thin films”, Nature Materials, 17, 1095-1100, 2018