1. Shuning Zhang, Fansen Cao, Haoyu Lu, Yingfen Wei*, Xuanyu Zhao, Hao Jiang, Xiaobing Yan*, Qi Liu*, “Interface Engineering on Ferroelectricity of Transparent Hf0.5Zr0.5O2 Ferroelectric Capacitors”, IEEE Electron Device Letters, 45, 12, 2347-2350, 2024
2. Shucheng Zhang, Yu Li*, Yingfen Wei*, Yize Sun, Xumeng Zhang, Hao Jiang*, Qi Liu, “A General Physics Model of Oxygen Vacancy Dynamics for Ferroelectricity Enhancement and Degradation in Hafnia-Based Thin Films”, IEEE Transactions on Electron Devices, 71, 11, 6706-6712, 2024
3. Guan Feng, Yu Li, Hao Jiang*, Xiaodong Wang, Yize Sun, Yingfen Wei*, Qi Liu*, Ming Liu, “Comprehensive Analysis of Duty-Cycle Induced Degradations in HfxZr1-xO2-Based Ferroelectric Capacitors: Behavior, Modeling, and Optimization”, 2024 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits), Honolulu, USA, 2024
4. Yu Li, Keji Zhou, Hao Jiang*, Zhangcheng Huang, Xumeng Zhang, Yingfen Wei*, Qi Liu, “Working Principles and Performance Optimization of Nonvolatile 6T2C-SRAM With Hafnia-Based Ferroelectric Capacitors”, IEEE Transactions on Electron Devices, 71, 8, 4631-4636, 2024
5. Yu Li, Hao Jiang*, Jie Yu, Xuanyu Zhao, Xiaodong Wang, Qihan Liu, Yingfen Wei*, Qi Liu*, Ming Liu, “High-efficient and Comprehensive Modeling of MFIM Ferroelectric Tunnel Junctions for Non-volatile/Volatile Applications”, IEEE International Memory Workshop (IMW), Seoul, Korea, 2024
6. Shuyu Wu, Xumeng Zhang, Rongrong Cao, Keji Zhou, Jikai Lu, Chao Li, Yang Yang, Dashan Shang, Yingfen Wei*, Hao Jiang*, Qi Liu*, “Multi-state nonvolatile capacitances in HfO2-based ferroelectric capacitor for neuromorphic computing”, Applied Physics Letters, 124, 102902, 2024
7. Yuan Wang, Lei Tao, Roger Guzman, Qing Luo*, Wu Zhou, Yang Yang, Yingfen Wei, Yu Liu, Pengfei Jiang, Yuting Chen, Shuxian Lv, Yaxin Ding, Wei Wei, Tiancheng Gong, Yan Wang, Qi Liu, Shixuan Du*, Ming Liu*, “A stable rhombohedral phase in ferroelectric Hf(Zr)1+xO2 capacitor with ultralow coercive field”, Science 381, 6657, 558-563, 2023
8. Yingfen Wei*, Gaurav Vats, Beatriz Noheda*, “Synaptic behaviour in ferroelectric epitaxial rhombohedral Hf0. 5Zr0. 5O2 thin films”, Neuromorphic Computing and Engineering 2, 044007, 2022 (Highlight Paper)
9. Pavan Nukala, Majid Ahmadi, Yingfen Wei, Sytze de Graaf, Evgenios Stylianidis, Tuhin Chakrabortty, Sylvia Matzen, Henny W. Zandbergen, Alexander Björlin, Dan Mannix, Dina Carbone, Bart Kooi, Beatriz Noheda*, “Reversible oxygen migration and phase transitions in hafnia-based ferroelectric devices”,Science, 372(6542): 630-635, 2021
10. Pavan Nukala#, Yingfen Wei#; Vincent de Haas, Qikai Guo, Jordi Antoja-Lleonart; Beatriz Noheda*, “Guidelines for the stabilization of a polar rhombohedral phase in epitaxial Hf0.5Zr0.5O2 thin films”, Ferroelectrics, 569(1: 50th Anniversary): 148-163, 2020 （appear in the Golden Jubilee edition of Ferroelectrics）
11. Yingfen Wei, Sylvia Matzen, Cynthia P. Quinteros, Thomas Maroutian, Guillaume Agnus, Philippe Lecoeur, Beatriz Noheda*; “Magneto-ionic control of spin polarization in multiferroic tunnel junctions”, npj Quantum Materials, 4(62): 1-6, 2019
12. Yingfen Wei, Sylvia Matzen, Thomas Maroutian, Guillaume Agnus, Mart Salverda; Pavan Nukala, Qihong Chen, Jianting Ye, Philippe Lecoeur, Beatriz Noheda*, “Magnetic tunnel junctions based on ferroelectric Hf0.5Zr0.5O2 tunnel barriers”, Physical Review Applied, 12(031001): 1-6, 2019（selected for editors suggestion highlight）
13. Yingfen Wei, Pavan Nukala, Mart Salverda, Sylvia Matzen, Hong Jian Zhao, Jamo Momand, Arnoud S. Everhardt, Guillaume Agnus, Graeme R. Blake, Philippe Lecoeur, Bart J. Kooi, Jorge Iniguez, Brahim Dkhil, Beatriz Noheda*, “A rhombohedral ferroelectric phase in epitaxially strained Hf0.5Zr0.5O2 thin films”, Nature Materials, 17, 1095-1100, 2018
