王明，国家海外优青、上海海外高层次和复旦大学新工科人才计划入选者。2009年于吉林大学电子学院毕业；2015年于中科院微电子所取得博士学位，师从刘明院士；2014年在美国密歇根大学交流访问，师从Wei D. Lu教授。毕业后加入北京华为技术有限公司，2016年到新加坡南洋理工大学从事博后研究，合作导师是Xiaodong Chen教授。当前研究方向为新型存储、计算与柔性智能感知，主要包括下一代存储器、神经形态计算器件与系统、柔性可拉伸传感器及集成技术等。

作为项目负责人主持国家重点研发计划、国家自然科学青年基金和上海脑计划“求索杰出青年”研究组长等项目。以第一/通讯作者发表期刊论文13篇和会议论文2篇，包括1篇Nat. Electron.、1篇Nat. Commun.、3篇 Adv. Mater.、2篇IEEE EDL等。目前担任IEEE EDL/TED、NPG Asia Mater.等多个学术期刊的审稿人。

1. M. Wang#, Z. Yan#, T. Wang, P. Cai, S. Gao, Y. Zeng, C. Wan, H. Wang, L. Pan, J. Yu, S. Pan, K. He, J. Lu, and X. Chen*, Gesture recognition using a bioinspired learning architecture that integrates visual data with somatosensory data from stretchable sensors, Nature Electronics 3, 563, 2020.

2. M. Wang#, C. Bi#, L. Li, S. Long, Q. Liu, H. Lv, N. Lu, P. Sun, and M. Liu*, Thermoelectric Seebeck effect in oxide-based resistive switching memory, Nature Communications 5, 4598, 2014.

3. M. Wang, Y. Luo, T. Wang, C. Wan, L. Pan, S. Pan, K. He, A. Neo, and X. Chen*, Artificial skin perception, Advanced Materials 33, 2003014, 2021.

4. T. Wang#, M. Wang#, L. Yang, Z. Li, X. J. Loh, and X. Chen*, Cyber–physiochemical interfaces, Advanced Materials 32, 1905522, 2020. (Co-first author)

5. M. Wang, W. Wang, W. R. Leow, C. Wan, G. Chen, Y. Zeng, J. Yu, Y. Liu, P. Cai, H. Wang, D. Ielmini*, and X. Chen*, Enhancing the matrix addressing of flexible sensory arrays by a highly nonlinear threshold switch, Advanced Materials 30, 1802516, 2018.

6. M. Wang,T. Wang, Y. Luo, K. He, L. Pan, Z. Li, Z. Cui, Z. Liu, J. Tu, and X. Chen*, Fusing stretchable sensing technology with machine learning for human-machine interfaces, Advanced Functional Materials 31, 2008807, 2021.

7. M. Wang, T. Wang, P. Cai, and X. Chen*, Nanomaterials discovery and design through machine learning, Small Methods 3, 1900025, 2019.

8. W. Kong, Y. Yang, Y. Wang, H. Cheng, P. Yan, L. Huang, J. Ning, F. Zeng, X. Cai*, and Ming Wang*, An ultra-low hysteresis, self-healing and stretchable conductor based on dynamic disulfide covalent adaptable networks, Journal of Materials Chemistry A, 2022. (Accepted)

9. J. Cao, X. Zhang, H. Cheng, J. Qiu, X. Liu, M. Wang*, and Qi Liu, Emerging dynamic memristors for neuromorphic reservoir computing, Nanoscale, 2022. (Accepted)

10. X. Liu, J. Cao, J. Qiu, X. Zhang, M. Wang*, and Qi Liu, Flexible and stretchable memristive arrays for in-memory computing, Frontiers in Nanotechnology, 2022. (Accepted)

11. M. Wang*, K. Guo, and H. Cheng, Stretchable HfO₂-based resistive switching memory using the wavy structured design, IEEE Electron Device Letters 41, 1118, 2020.

12. M. Wang#, J. Zhou#, Y. Yang, S. Gaba, M. Liu, and W. D. Lu*, Conduction mechanism of a TaO_x-based selector and its application in crossbar memory arrays, Nanoscale 7, 4964, 2015.

13. M. Wang, H. Lv, Q. Liu, Y. Li, Z. Xu, S. Long, H. Xie, K. Zhang, X. Liu, H. Sun, X. Yang, and M. Liu*, Investigation of one-dimensional thickness scaling on Cu/HfO_x/Pt resistive switching device performance IEEE Electron Device Letters, 33, 1556, 2012.